Novellus
wafer size : 4” ~ 6”
Dual RF configuration (HF, LF)
8 wafers can be process in the chamber
Optimize RF clean by end point detector
PE TEOS process (option)
Material : Oxide, Nitride, SION (ARC)

Novellus
wafer size : 6”~ 8”
High performance CVD
Dual RF configuration (HF, LF)
6 wafers can be process in the chamber
Option : Optimize RF clean by end point detector
Process Option : PE TEOS, TEOS
Material : Oxide, Nitride, SiON (ARC)

Novellus
wafer size : 6”~ 8”
High performance CVD
HF RF configuration
5 wafers can be process in the chamber
Option : Optimize RF clean by end point detector
Process : Barrier
Material : W

Novellus
High Density Plasma CVD
Dual RF configuration (HF, LF)
Deposition Option ; BC, BUC, UBUC
Gas : Pre-mixed SiH4, O2 and Ar or He
Process : IMD, ILD, STI
Material : SiO2

HDP CVD Process
STI (Shallow Trench Isolation)
ILD (Interlayer Dielectric)
IMD (Intermetal Dielectric)
PMD (Pre-Metal Dielectric)
Passivation
Ceramic dome