PVD

  • Varian XM-90
  • Varian-3000
  • Varian-M2000
  • Varian-M2i
  • Varian-MB2
  • Endura
  • Fronos

More info

Etcher

  • E-MAX
  • Centura DPS

More info

Asher

  • L3510
  • PEP3510

More info

CMP

  • EBARA EPO222
  • Mira Mesa

More info

Chemical

  • Si Source
  • Ti Source
  • Zr Source
  • Hf Source
  • other Source

More info

Chemical Vapor Deposition

Concept-One

Novellus
wafer size : 4” ~ 6”
Dual RF configuration (HF, LF)
8 wafers can be process in the chamber
Optimize RF clean by end point detector
PE TEOS process (option)
Material : Oxide, Nitride, SION (ARC)

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Concept 2 Sequel

Novellus
wafer size : 6”~ 8”
High performance CVD
Dual RF configuration (HF, LF)
6 wafers can be process in the chamber
Option : Optimize RF clean by end point detector
Process Option : PE TEOS, TEOS
Material : Oxide, Nitride, SiON (ARC)

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Concept 2 Altus

Novellus
wafer size : 6”~ 8”
High performance CVD
HF RF configuration
5 wafers can be process in the chamber
Option : Optimize RF clean by end point detector
Process : Barrier
Material : W

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Concept 2 Speed

Novellus
High Density Plasma CVD
Dual RF configuration (HF, LF)
Deposition Option ; BC, BUC, UBUC
Gas : Pre-mixed SiH4, O2 and Ar or He
Process : IMD, ILD, STI
Material : SiO2

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Ultima

HDP CVD Process
STI (Shallow Trench Isolation)
ILD (Interlayer Dielectric)
IMD (Intermetal Dielectric)
PMD (Pre-Metal Dielectric)
Passivation
Ceramic dome

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